nMOSFET en · NOUN
Pronunciation
- /ˈɛnˌɛmˌoʊˌɛsˌɛfˌiːˌtiː/
Etymology
n + MOSFET, where n denotes "negative" or "n-type".
Meanings
-
(qualifier:semiconductors) A type of metal–oxide–semiconductor field-effect transistor (MOSFET) that utilizes an n-type channel, conducting when a voltage voltage exceeding a threshold is applied to the gate relative to the source. It is commonly used in complementary metal–oxide–semiconductor (CMOS) technology alongside pMOSFETs.
The source-drain breakdown characteristic of NMOSFETS exhibits an abrupt curve due to avalanche breakdown following punchthrough.
1990 March, Katsushi Asahina, Shuji Murakami, Katsuki Ichinose, Fuyumi Minami, Yasuhiro Funakoshi, “A 256-K 13-Nanosecond CMOS SRAM”, in Electronics & Communications in Japan, Part 2: Electronics, volume 73, number 3, page 44:To achieve a large dynamic range, low leakage, and high bandwidth, the SCA sampling switches are implemented as 2.5 V nMOSFETs controlled by 1.2 V shift registers.
2025 March, Jinseo1 Park, Evan Angelico, Andrew Arzac, Davide Braga, Ahan Datta, Troy England, Farah Fahim, Henry J. Frisch, Mary Heintz, Eric Oberla, Nathaniel J. Pastika, Hector D. Rico-Aniles, Paul M. Rubinov, Xiaoran Wang, Y.M. Richmond Yeung, “Design of an 8-channel 40 GS/s 20 mW/Ch waveform sampling ASIC in 65 nm CMOS.”, in Nuclear Instruments & Methods in Physics Research Section A, volume 1072, page 1:
Forms
| Spelling | Features | Labels | Source |
|---|---|---|---|
| nMOSFETs | Number=Plur | lexicographic |